Electrical Characterization of 3D Integrated Ferroelectric Memories
Offer DescriptionWe are seeking device engineer candidates for exploring 3D integrated ferroelectric memories.What you will doMemories are an essential building block for all electronic systems and great efforts are being made by the industry and academia to improve existing technologies and to invent new ones. Since its invention in 1968the ’70, the dominant memory type has been the Dynamic Random Access memory (DRAM), serving as the main memory of almost every computer. Over many decades, DRAM cost scaling followed the well-known law of Gordon Moore. However, more recently this historical scaling trend has significantly slowed down, posing increasing challenges for memory hungry data centers. At the same time, a major shift is occurring in the design of computer architectures. New applications such as machine learning require data access patterns that are different from the classical Von Neuman computer model. This evolution opens opportunities for new types of so-called Storage Class memories (SCM). Several different types of SCM are being investigated currently, and one of the leading candidates is 3D integrated ferroelectric memory.Imec has made significant progress in the research of this type of memory and is increasing its research effort on this topic. By establishing a solid test vehicle platform, a wide range of different device design, operation and memory array implementation options have become available. A critical aspect in the evaluation of the viability of these concepts will be the characterization of the electrical performance such as speed, memory window and disturb, as well as reliability performance such as retention, imprint, wake-up, breakdown and fatigue. A first step is the determination and documentation of these various parameters. A second step is to establish a deeper understanding of the device behaviour. Ultimately, these studies are expected to result in recommendations for improved device design, processing or operating conditions. You will:Imec is soliciting device engineer candidates for exploring 3D integrated ferroelectric memories. The goal is to characterize and model the operation and reliability of these types of memories. Emphasis will be put on the use and development of advanced electrical measurement techniques and the in-depth understanding of the fabricated devices.Where to apply WebsiteRequirementsResearch Field Engineering » Electrical engineering Education Level Master Degree or equivalentResearch Field Engineering » Electronic engineering Education Level Master Degree or equivalentResearch Field Physics » Electronics Education Level PhD or equivalentSkills/QualificationsWho you are
Languages ENGLISH Level ExcellentAdditional InformationBenefitsWhat we do for youWe offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.We are and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, ‘our corporate university’, we actively invest in your development to further your technical and personal growth.We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits.Work Location(s)Number of offers available 1 Company/Institute imec Country Belgium City Leuven GeofieldContact CityLeuven WebsiteStreetKapeldreef 75 Postal Code3001 E-Mailjobs@imec.beSTATUS: EXPIREDShare this page
Leuven, Vlaams Brabant
Sun, 15 Jun 2025 01:52:03 GMT
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